Complimentary Metal Oxide Semiconductor (CMOS) Processes

The CMOS Processes which are currently being used by the RCIM include:

CMOSP8: (0.8-micron)

CMC Microsystems offers access to DALSA Semiconductor's 0.8-micron CMOS technology (CMOSP8) with three different process flavors: high-voltage (up to 300V), mid-voltage range (+/-20V), standard-voltage (2.7V to 5.5V).

DALSA Semiconductor’s high-voltage CMOS is integrated with standard baseline CMOS and the combination provides excellent driving or actuating capabilities as well as signal conditioning and processing capabilities. CMC Microsystems has added this technology to its portfolio to support increased research and technology development activities that explore heterogeneous microsystems and target diverse application spaces. High-voltage electronics are often required for driving flat display panels, automotive applications, actuating MEMS devices, stimulating muscles in an implantable device, and manipulating particles or cells in fluidics.

90nm CMOS

The new CMOS090 design platform is based on ST's latest 90nm CMOS process technology, supplied through a partnership with CMP (Circuits Multi-Projets, France). Designed as a modular process, it allows maximum flexibility in combining multiple features. The 90nm design platform is intended for System-on-Chip (SoC) and ASIC solutions that target wireless, low-power, consumer, networking and hi-speed applications. Based on dual-damascene copper technology, it allows 6 to 9 metal layers of interconnect and a library density of more than 400,000 gates per mm². This technology offers 65nm poly length [90nm drawn, per CMP web site], dual V_t MOS transistors, dual gate oxide, dedicated process flavors for high performance or low power, dual-damascene copper for interconnect, low-k (k = 2.9) dielectric, 6 to 9 metal layers for interconnect, 0.28um metalization pitch, analog/RF capabilities, fully compatible with e-DRAM, and various power supplies (3.3V, 2.5V, 1.8V, 1.2V, 1V).

CMOSP13 (0.13-micron)

This technology, manufactured by IBM and supplied through collaboration with CMC Microsystems and MOSIS. It is an 8-layer metal structure with 1.2 V core and 2.5 V supply voltages.

CMOSP18 (0.18-micron)

This technology, developed by TSMC and supplied through collaboration with MOSIS, is a 0.18-micron, single poly, six metal, salicide CMOS process. The recommended nominal supply voltages are 1.8 and 3.3 volts. This technology is suitable for design in the following areas: analog, low power, RF, and full custom digital. The minimum drawn gate length is 0.18 microns.

CMOSP35 (0.35-micron)

This technology, manufactured by TSMC and provided through CMC Microsystems and TMSC, PMC-Sierra or MOSIS, is a 0.35-micron dual poly, triple metal, polycide CMOS process. The recommended nominal supply voltage is 3.3 volts. The technology is suitable for designs in the following areas: analog, low power, RF, high-speed digital, DSP and synthesis. The minimum drawn gate length is 0.35 microns.

CMC Microsystems's fabrication service includes automatic substitution of "phantom" or "black box" cells with the complete version of their layout.